Ir2110 Mosfet Gate Driver Ic

The ic is having independent low and high side output channel.

Ir2110 mosfet gate driver ic.

Power mosfet models figure 2c is the switching model of the mosfet. Rc circuit model for a gate driver with mosfet output stage and power device as a capacitor. For a specific drive current the lower value of r ds on allows higher r ext to be used. The most important parasitic components that influences switching performance are shown in this model.

It can tolerate negative transient voltage. Features floating channel designed for bootstrap operation fully operational to 500v or 600v tolerant to negative transient voltage dv dt immune gate drive supply range from 10 to 20v undervoltage lockout for both channels 3 3v logic compatible separate logic supply range from 3 3v to 20v. By apogeeweb ir2110 2110 ir2110 datasheet ir2110 pinout ir2110 circuit mosfet driver igbt driver. The range of separate voltage supply is from 3 3v to 20v and supply range of gate driver is from 10 to 20 v.

By using a single ic a half bridge circuit can be operated in which one mosfet is in high side configuration and another one is in the low side configuration. Ir2110 comes in 14 pin through hole pdip package and the 16 pin surface mount soic package. Now in this tutorial bootstrap circuit method to drive a high side mosfet will be discussed. It has a floating circuit to handle to bootstrap operation.

Fundamentals of mosfet and igbt gate driver circuits figure 2. Operating supply voltage range for ir2110 is 10 to 20 volt and output current is 2 5a. Ir2112 mosfet igbt driver features. 500 v high side and low side gate driver ic with shutdown.

High and low side driver ic with source current 0 25 a and sink current 0 5 a. The ir2110 is a high voltage high speed power mosfet and igbt driver with independent high and low side referenced output channels. R ds on also directly affects power dissipation internal to the driver. The ir2110 ic is one of the high speed and high voltage gate driver ics for igbt and power mosfet.

In h bridge used in pure sine wave inverter design 2 mosfet are used as high side mosfet and 2 mosfet is used as low side mosfet. International rectifiers ir2110 mosfet driver can be used as a high side and low side mosfet driver. Ir2210 can withstand voltage up to 500v offset voltage. Their respective roles are discussed in section 2 3 which is dedicated to the switching procedure of the device.